Anisotropy of electrical resistivity in PVT grown WSe 2−x crystals

Abstract

Single crystals of p-type WSe₂ and WSe_1.9 were grown by a physical vapour transport technique. The anisotropy in d.c. electrical resistivity was investigated in these grown crystals. The off-stoichiometric WSe_1.9 exhibited a higher anisotropy ratio as compared to WSe₂ crystals. The electron microscopic examination revealed the presence of a large number of stacking faults in these crystals. The resistivity enhancement along the c-axis and anisotropic effective mass ratio explained on the basis of structural disorder introduced due to off-stoichiometry.

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